发明名称 MAGNETRON SPUTTERING APPARATUS
摘要 PURPOSE:To provide the titled apparatus showing superior performance especially during the sputtering of a magnetic material by adopting a structure giving an intense magnetic field which is as parallel as possible to a face of the anode in the vicinity of the anode. CONSTITUTION:The sputtering cathode 11 of a magnetron sputtering apparatus is made of ferromagnetic Co-Ni material, and the anode 12 of nonmagnetic stainless steel. The anode 12 is cylindrical, yet it is deformed so as to obtain the highest parallelism to a magnetic field. A vertically magnetized cylindrical magnet 13 is kept equal to the anode 12 in potential. The magnetic sputtering apparatus thus constructed has enhanced sputtering efficiency as compared to a case where no magnet is built in the anode section. Especially, when the cathode is made of magnetic material, a magnetic thin film of high quality can be formed at a much higher speed than the speed of a conventional sputtering apparatus with a magnetic device built in the cathode section alone.
申请公布号 JPS5732372(A) 申请公布日期 1982.02.22
申请号 JP19800107300 申请日期 1980.08.05
申请人 ANELVA CORP 发明人 KOBAYASHI SHIYUNYOU;INOWAKI SHIYUUICHI
分类号 C23C14/36;C23C14/35;H01J37/34 主分类号 C23C14/36
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