| 摘要 |
PURPOSE:To perform a high intensity light emitting element having a visible short wavelength (blue-ultraviolet) light by forming a semiconductor substrate of compound semiconductor and a current injection part of compound semiconductor containing at least Be and Te as component elements. CONSTITUTION:A semiconductor substrate 1 is formed of compound semiconductor, and a current injection part 2 is formed of compound semiconductor containing at least Be (beryllium) and Te (tellurium) as component elements. In this case, since characteristic containing conductivity of the current injection layer 2 relatively scarcely depending upon a defect in an epitaxially grown layer, desired (low resistance, etc.) characteristic can be easily obtained, and the band gap of the layer 2 is sufficiently larger than that of the light emitting layer 1 without respect to light emitting characteristic, but its band gap can be increased larger than that of the layer 1. Thus, an injection efficiency can be greatly improved. Thus, a light emitting element having a high intensity blue light emitting diode can be manufactured. |
