| 摘要 |
PURPOSE:To eliminate a phenomenon of peeling between layers generated in the case of wire bonding by interposing a thin titanium layer of 30 to 1000Angstrom of a range between a gold alloy layer and a titanium nitride layer in ohmic contact with one another. CONSTITUTION:An allay layer containing gold as a main ingredient in ohmic contact, as a first layer 4, a titanium layer as a second layer 5, a titanium nitride layer as a third layer 6, a titanium layer as a fourth layer 7 and an aluminum layer as a fifth layer 8 are sequentially laminated as an electrode. The second layer 5 is formed in thickness of 30-1000Angstrom of a range. Thus, a phenomenon of peeling between layers generated in the case of wire bonding of the electrodes of a light emitting diode can be eliminated without loss of barrier performance of the titanium nitride layer. |
