| 摘要 |
<p>A method of forming a layered structure, which method comprises depositing in superposition on a substrate, a first metal layer, a barrier layer and a second metal layer, etching the first and second metal layers and the barrier layer in accordance with a first masking pattern, etching the second metal layer in accordance with a second masking pattern, depositing a dielectric layer, etching the dielectric layer to expose the second metal layer, and depositing a further metal layer to contact the exposed second metal layer.</p> |
