| 摘要 |
PURPOSE:To improve the surge resistivity preventing the characteristics from deteriorating by a method wherein diodes with the normal directivity of gates are connected between gates and source while the reverse directional withstand voltage characteristics of the diodes is made lower than that of the gates. CONSTITUTION:Diodes 35 and 36 are connected between the first gate 31, the second gate 32 and a source 33. The reverse directional withstand voltage characteristics of the diodes is made lower than that of a field effect transistor. On the other hand, as for the normal directional characteristics, the rising voltages of the field effect transistor and the diodes may be made equivalent. |
