| 摘要 |
PURPOSE:To prevent from effecting chemical reaction at the reflective surface by a method wherein the light-emitting region and the carrier confinement layer are made to position on the deeper inside than the end surfaces of the resonator and a semiconductor layer having a larger forbidden band width than that of the light guide layer is formed. CONSTITUTION:In the first crystal growth process, an n type Al0.5Ga0.5As layer 11, an Al0.12Ga0.88As active layer 12, a p type Al0.6Ga0.4As layer 13, a p type Al0.3Ga0.7As layer 14, a p type Al0.4Ga0.6As layer 15 and a p type GaAs layer 16 are respectively formed on an n type GaAs substrate 1 in order. The crystal surface is cleaned, and after that, in the second crystal growth process, a p type Al0.35Ga0.65As layer 19 is successively formed in such a way as to be buried between each of the side parts of the mesa laminated body and the end surfaces of the resonator and each of the Al0.5Ga0.5As layer 11, the Al0.12Ga0.88As layer 12, which is used as an active layer; and the Al0.6Ga0.4As layer 13. |
