| 摘要 |
PURPOSE:To enable easy measurement of reverse characteristics even after packaging, by forming resistances for the reverse characteristics measurement of P-N joints between gauge resistance and diaphragm on a semiconductor substrate and connecting a lead-out line of this resistance to an outside lead terminal of the package. CONSTITUTION:Jointing point of gauge resistances 11, 12, jointing point of gauge resistances 12, 13 and jointing point of gauge resistances 13, 4 are connected with outside lead terminals 16-18 respectively and each one end of the gauge resistances 11, 14 are connected to the outside lead terminals 19, 20 respectively and a lead-out line of a P type resistance is connected with the outside lead terminal 21. Further, even after packaging, a positive voltage is applied to the outside lead terminal 21 and a negative voltage is applied to either one of the outside lead terminals 16-20 and by measuring an electric current then flowing, the reverse voltage-current characteristics of P-N junction between gauge resistance unit and diaphragm 10a can be measured. |
