| 摘要 |
PURPOSE:To relieve the load to Schottky junctions of gate electrodes, by providing two diodes which are connected in series to a second electrode and are forward and backward with respect to each other. CONSTITUTION:A transistor 23 having first and second gate electrodes G1 and G2 comprising Schottky junctions, a single diode 21 comprising a Schottky junction connected to the first gate electrode G1 and formed of the same material with the gate electrode G1, and two diodes 22 which are forward and backward with respect to each other and connected in series to the second electrode G2 are provided on a compound semiconductor substrate 2. Since the protection diode 21 is also has a Schottky junction, momentary surge current can be absorbed half and half by the first gate electrode G1 of the GaAs MESFET and the electrode of the protection diode 21. Thus, the surge energy applied to the gate electrodes can be reduced by half. In this manner, the load to the Schottky junctions of the gate electrodes can be relieved.
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