| 摘要 |
PURPOSE:To obtain thin film, by irradiating a novel diethynylbenzene derivative having diethynylbenzene structure as well as methylene chain in the molecule and vinyl group at one molecular end and hydrogen or alkylsilyl group at the other molecular end with energy. CONSTITUTION:A diethynylvbenzene derivative expressed by formula I (R is H or -SiX1X2X3; X1, X2 and X3 are H or 1-7C alkyl; 3<=n<=21) is polymerized by irradiation with energy, e.g. gamma-rays, electron rays, X-rays, ultraviolet ray, visible rays, etc., to afford the aimed polymer thin film. The diethynylbenzene derivative expressed by formula I is deposited in normally 20-1,800Angstrom thickness on a substrate, e.g. quartz, calcium fluoride, etc., by the Langmuir-Brodgett method and polymerized by the irradiation with energy to afford the aimed film having an ultrathin film thickness and high degree of orientation. A resist material having high definition and sensitivity is obtained.
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