| 摘要 |
PURPOSE:To prevent damage to a heat-resistant resin layer in a production process and simplify the control of a value of resistance by a method wherein an amorphous substance layer formed by successively laminating an amorphous silicon oxide containing at least one of hydrogen and halogen and an amorphous silicon carbide containing at least one of hydrogen and halogen is provided as a resin protective layer in a heat-resistant insulating substrate. CONSTITUTION:On a metal substrate 1, a heat-resistant resin layer 2 serving as a heat-accumulation layer and also an insulating layer is formed. On the heat-resistant resin layer 2, a resin protective layer 3 made of an amorphous substance mainly composed of a-SiO and a-SiC and containing at least one of hydrogen and halogen is provided to form a heat-resistant insulating substrate 4. In this manner, the possibility of damaging the heat-resistant resin layer is eliminated when an electrode substance and a heating resistor substance are dissolved and removed into a required circuit pattern, and a gas generation can be prevented when the heating resistor substance is formed in vacuum, which also stabilizing a resistance value. |
