| 摘要 |
<p>PURPOSE:To improve the shape of resist patterns by subjecting a chemical amplification type resist applied on a substrate to 1st exposing and bringing a chemical dye into selective reaction into the chemically activated part of a resist surface, then subjecting the entire surface to 2nd exposing. CONSTITUTION:The chemical amplification type resist 2A is applied on a semiconductor substrate 1 and is subjected to the 1st exposing by an ArF laser beam. The resist 2A is then immersed into a soln. prepd. by dissolving the chemical dye of an azo system into a solvent to fix the dye to the surface of the resist 2A. This chemical dye reacts with a phenolic hydroxyl group and fixes selectively to the 1st exposed parts 2a, thereby forming a dye mask 2b. A KrF laser beam has low transmittability to the dye mask 2b by the 2nd exposing and, therefore, the parts exclusive of the dye mask 2b are exposed and since the 2nd exposed parts are solubilized, these parts are removed by alkali development and the resist patterns 4 consisting of the dye mask 2b and the unexposed parts 2c thereunder are formed. The process is simplified in this way and since the fixing of the chemical dye is sure, the reproducibility of the patterns is good.</p> |
