发明名称 |
Method for forming a fine resist pattern |
摘要 |
A method for forming a fine resist pattern by exposing comprising the steps of: (i) forming a resist layer on a semiconductor substrate; (ii) forming a phase shifting pattern in an upper portion of the resist layer, the phase-sifting pattern having a tapered edge corresponding to a portion to which formation of an objective fine resist pattern is not desired; (iii) exposing the entire surface of the semiconductor substrate including the phase-shifting pattern; and (iv) forming a fine resist pattern below an outline except for the tapered edge of the phase-shifting pattern.
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申请公布号 |
US5480047(A) |
申请公布日期 |
1996.01.02 |
申请号 |
US19940242082 |
申请日期 |
1994.05.12 |
申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
TANIGAWA, MAKOTO;TABUCHI, HIROKI;TANIGUCHI, TAKAYUKI |
分类号 |
G03F1/00;G03F7/09;G03F7/20;H01L21/027;H01L21/30;(IPC1-7):B44C1/22 |
主分类号 |
G03F1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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