| 摘要 |
An apparatus for projecting a mask pattern (MA) on a substrate (W) by means of a projection lens system (PL) is described, which apparatus comprises a device for aligning a mask alignment mark (M1, M2) with respect to a substrate alignment mark (P1, P2). Means (WE1, WE2) preventing phase differences due to reflections at the mask plate (MA) from occurring within the alignment beam portions received by a detection system (13, 13') are arranged in the path of selected alignment beam portions (b1, b1').
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