| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor of chalcopyrite structure which is of low resistance with less crystal defect and of p-type conductive type by doping impurities at low concentration. SOLUTION: A semiconductor of chalcopyrite structure shown by a chemical formula, I-III-VI2 , is doped with IV-group element such as carbon, silicon, etc., or boron of III-group element, thereby obtaining a semiconductor of chalcopyrite structure which is of low resistance and of p-type conductive type as shown by chemical formula, I-III-IVx VI2-x or I-III-IIIx VI2-x (where, I: Ib-group element in element periodic table; III: IIIb-group element; IV: IVb-group element; VI: VIb-group element). |
