| 摘要 |
PROBLEM TO BE SOLVED: To suppress the diffusion of the material for a lower electrode in a PTC thermistor thin film and a substrate by a method, wherein a heat-treating process comprises at least one time of a process of rapid heating treatment. SOLUTION: A lower nickel electrode 2 is formed on a substrate 1 by a sputtering method. The substrate temperature at this time is held at about 150 deg.C. Then, a positive temperature coefficient(PTC) thermistor thin film 3 is formed on the electrode 2 by an rf magnetron sputtering method using a ceramic target. The obtained substrate is installed under a lamp heater in a heating unit and the lamp heater is lighted up, whereby the substrate is heated at 900 to 1,500 deg.C for about 6 seconds. This state is further held for 0.5 to 5 minutes. The lamp heater is turned off to air-cool the substrate, and the substrate is cooled to room temperatures in about 6 seconds. This continuous treatment is performed on the substrate about 10 times. After that, an upper electrode 4 is formed by a vacuum deposition method to manufacture a PTC thermistor thin film element. |
