发明名称 |
METHOD FOR FORMING SOLDER BUMP COMPRISING CHROMIUM UNDER BARRIER METAL |
摘要 |
<p>PURPOSE: A method for forming a solder bump comprising a chromium under barrier metal is provided to prevent the fusion of a solder during a process for etching chromium under barrier metal. CONSTITUTION: A method for forming a solder bump comprising a chromium under barrier metal comprises the steps of: providing(110) a wafer having a protection layer for opening an electrode pad; forming(120) a chromium under barrier metal on the wafer; electroplating a solder(130); removing(140) an under barrier metal; and forming(150) a solder bump by reflowing the solder. The step of removing the under barrier metal comprises the steps of: forming a sensitive layer on the solder; removing the chromium under barrier metal by using the sensitive layer as a mask; and removing the sensitive layer.</p> |
申请公布号 |
KR20000025974(A) |
申请公布日期 |
2000.05.06 |
申请号 |
KR19980043307 |
申请日期 |
1998.10.16 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHO, MIN GYO;KIM, KYUNG HEE |
分类号 |
H01L21/60;(IPC1-7):H01L21/60 |
主分类号 |
H01L21/60 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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