| 摘要 |
PURPOSE: A thin film transistor and manufacturing method thereof is provided to decrease a process badness by equaling a thickness a source region or a drain region to a source electrode or an insulating film located on an upper portion of an active region and an insulating film located on an upper portion of the source electrode and a drain electrode. CONSTITUTION: Source electrodes(50S,50'S) and drain electrodes(50D,50'D) are formed on an insulating substrate(500). A pattern etched layer insulating film(52) is formed to a certain region. An active layer(53) having a source region(563S), a channel region(53C), and a drain region(53D) is formed on the layer insulating film(52). A gate insulating film(54) is covered to an exposed front surface of a substrate having a source electrode(50S), a drain electrode(50D), and the active layer(53). A gate electrode(55) is formed on the gate insulating film(54) formed on an upper portion of the channel region(53C). A protecting film(56) is covered to an exposed front surface of the substrate having the gate electrode(55). A contact hole is formed to the gate insulating film(54). |
