METHOD FOR MANUFACTURING A CONTACT HOLE OF A SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a contact hole of a semiconductor device is provided to prevent a loss of a field oxidation layer by using as a stop layer a silicide layer having a selectivity considerably higher than that of a nitride layer regarding an oxidation layer, and to reduce contact resistance by forming a broad area of the silicide layer contacting an active region in a contact hole. CONSTITUTION: An epi-silicon layer is formed by growing an active region(16). The epi-silicon layer is changed to the first silicide layer. The first oxidation layer is evaporated. A photoresist layer is applied and patterned to form a photoresist layer pattern. The first oxidation layer is etched by using the photoresist layer pattern as a mask to form a contact hole exposing the first silicide layer(14).