| 摘要 |
PROBLEM TO BE SOLVED: To fine a metal dot pattern, and at the same time to inhibit increase in via resistance in a semiconductor device having multilayer interconnection with stacked via structure. SOLUTION: A first conductive film for wiring on a semiconductor substrate 101 is etched with a first via contact 106 as a mask to form a first layer wiring 1 03A, and a second interlayer insulation film 108 is deposited. Then the upper end part of the first via contact 106 is made to project from the upper surface of the second interlayer insulation film 108, a second conductive film 109 for wiring and a third interlayer insulation film 110 are deposited, and a second via contact 111 is formed at the upper side of the first via contact 106 in the third interlayer insulation film 110. The second conductive film 109 for wiring is etched with the second via contact 111 as the mask, to form a metal dot pattern 109B.
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