发明名称 APPARATUS AND METHOD FOR PLASMA PROCESSING
摘要 PROBLEM TO BE SOLVED: To provide an apparatus and a method for plasma processing capable of uniformly and rapidly plasma processing particularly a base having a large area with high productivity and high quality. SOLUTION: The apparatus 101 for plasma processing comprises a reaction container for forming a plasma, a gas supply unit 115 for supplying a gas into the container, electrodes 103 disposed out of the container to introduce a discharging power into the container, and a gas exhaust part 102 for exhausting the gas in the container. Thus, the apparatus 101 disposes a base 109 in the container, decomposes the gas by the power and plasma processes the base. In this case, at least a part of the container is constituted by superposing a plurality of dielectric members 107a, 107b. The method for plasma processing uses the apparatus.
申请公布号 JP2001313261(A) 申请公布日期 2001.11.09
申请号 JP20000132371 申请日期 2000.05.01
申请人 CANON INC 发明人 AOIKE TATSUYUKI;HOSOI KAZUTO;SHIRASAGO TOSHIYASU;TAZAWA DAISUKE;MURAYAMA HITOSHI;AKIYAMA KAZUYOSHI;OTSUKA TAKASHI
分类号 B01J19/08;C23C16/44;H01L21/205;(IPC1-7):H01L21/205 主分类号 B01J19/08
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