METHOD FOR ISOLATING TRENCH DEVICE

摘要

PURPOSE: A method for isolating a trench device is provided to improve productivity of a semiconductor device by simplifying a process for filling an insulating layer in an inside of a trench. CONSTITUTION: An etch mask pattern(16) is formed on an upper portion of a semiconductor substrate(10) in order to expose a predetermined region of the semiconductor substrate(10). The exposed semiconductor substrate(10) is etched and a trench is formed by using the etch mask pattern as an etch mask. An insulating layer(23) for filling an inside of the trench is formed on the whole surface of the above structure formed with the trench. A material layer(24) is laminated on the insulating layer(23). The etch mask pattern is exposed by etching the material layer(24) and the insulating layer(23). An isolation layer pattern is formed within the trench. The exposed etch mask pattern is removed.