摘要 |
<p>PROBLEM TO BE SOLVED: To manufacture a semiconductor element having a normal STI structure by applying a uniform polishing pressure to an overall effective chip when polishing and eliminating a polishing insufficiency of the chip adjacent to a marking region. SOLUTION: A method for manufacturing the semiconductor element comprises a step of executing machining capable of giving a polishing pressure equivalent to another effective chip to the effective chip adjacent to the marking region to the marking region of a wafer having a device region, a grid line region and the marking region such as, for example, tapering and spot facing, a step of marking the marking region, a step of sequentially forming a nitride film and an oxide film in this order on a surface of the wafer, a step of removing by polishing the oxide film by polishing, and a step of removing the nitride film.</p> |