发明名称 METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT
摘要 <p>PROBLEM TO BE SOLVED: To manufacture a semiconductor element having a normal STI structure by applying a uniform polishing pressure to an overall effective chip when polishing and eliminating a polishing insufficiency of the chip adjacent to a marking region. SOLUTION: A method for manufacturing the semiconductor element comprises a step of executing machining capable of giving a polishing pressure equivalent to another effective chip to the effective chip adjacent to the marking region to the marking region of a wafer having a device region, a grid line region and the marking region such as, for example, tapering and spot facing, a step of marking the marking region, a step of sequentially forming a nitride film and an oxide film in this order on a surface of the wafer, a step of removing by polishing the oxide film by polishing, and a step of removing the nitride film.</p>
申请公布号 JP2002158198(A) 申请公布日期 2002.05.31
申请号 JP20000352714 申请日期 2000.11.20
申请人 OKI ELECTRIC IND CO LTD 发明人 KONO HIROYUKI
分类号 H01L21/76;H01L21/02;H01L21/304;H01L21/762;H01L23/544;(IPC1-7):H01L21/304 主分类号 H01L21/76
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