SEMICONDUCTOR MEMORY DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor memory device in which the separation of a photoresist film can be prevented when dividing a element isolation area. SOLUTION: An element to be formed in a dummy element area 1e and an element area 1b in a proximity effect absorption area A does not contribute to storage of data as a dummy element. Consequently, the influence of an proximity effect is absorbed in this portion, and the influence of the proximity effect does not attain to a memory element in a memory cell array area B as is the case with a DRAM adopting a conventional half cell. Moreover, despite of a formed auxiliary part 1d, the size of the proximity effect absorption area A does not enlarge a chip size even when compared with a conventional chip because the size of the proximity effect absorption area A does not influence at all length in the extending direction of the element area 1b.