| 摘要 |
PURPOSE:To selectively and excellently form a III-V family compound semiconductor layer on a semiconductor substrate, by employing as a mask a III-family element nitride layer formed on the semiconductor substrate. CONSTITUTION:An aluminum nitride layer 12 is formed on a GaAs substrate 11. After the layer 12 is etched to provide an opening, a GaAs film 13 is grown on the substrate 11. The growth of the film 13 with the layer 12 used as a mask permits the film 13 on the mask not to mention the substrate 11 to be formed substantially flat. It is to be noted that the III-family element nitride is required to be amorphous, polycrystalline or single crystal. An equivalent effect can be obtained with a III-V family compound semiconductor. |
