发明名称 |
MOSFET dielectric including a diffusion barrier |
摘要 |
A semiconductor device includes a substrate, a multilayered assembly of high k dielectric materials formed on the substrate, and a first conducting material formed on the upper layer of the assembly of high k dielectric materials. The multilayered high k dielectric assembly includes a lower layer, an upper layer, and a diffusion barrier layer formed between the lower and upper dielectric layers. The diffusion barrier layer has a greater affinity for oxygen than the upper and lower layers. The first conducting layer includes a conducting compound of at least a metal element and oxygen.
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申请公布号 |
US2007096226(A1) |
申请公布日期 |
2007.05.03 |
申请号 |
US20050264069 |
申请日期 |
2005.10.31 |
申请人 |
LIU CHUN-LI;MERCHANT TUSHAR P;ORLOWSKI MARIUS K;SCHAEFFER JAMES K;STOKER MATTHEW W |
发明人 |
LIU CHUN-LI;MERCHANT TUSHAR P.;ORLOWSKI MARIUS K.;SCHAEFFER JAMES K.;STOKER MATTHEW W. |
分类号 |
H01L29/94;H01L29/76;H01L31/00 |
主分类号 |
H01L29/94 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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