发明名称 |
Trench structure having a void and inductor including the trench structure |
摘要 |
In a method of forming a trench structure having a wide void therein, a first trench having a first width and a first depth is formed in a substrate. The first trench is filled with a first insulation layer pattern defining the void in the first trench. A second trench is formed on the first trench. The second trench has a second width wider than the first width and a second depth shallower than the first depth. The second trench is filled with a second insulation layer pattern. After an insulating interlayer on the substrate including the first and second trenches, a conductive line is formed on a portion of the insulating interlayer where the second trench is positioned so that an inductor is formed over the trench structure.
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申请公布号 |
US7326625(B2) |
申请公布日期 |
2008.02.05 |
申请号 |
US20050052552 |
申请日期 |
2005.02.07 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
JEONG JOO-HYUN;CHUNG CHUL-HO |
分类号 |
H01L21/20;H01L27/02;H01L21/02;H01L21/764;H01L27/08 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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