发明名称 Trench structure having a void and inductor including the trench structure
摘要 In a method of forming a trench structure having a wide void therein, a first trench having a first width and a first depth is formed in a substrate. The first trench is filled with a first insulation layer pattern defining the void in the first trench. A second trench is formed on the first trench. The second trench has a second width wider than the first width and a second depth shallower than the first depth. The second trench is filled with a second insulation layer pattern. After an insulating interlayer on the substrate including the first and second trenches, a conductive line is formed on a portion of the insulating interlayer where the second trench is positioned so that an inductor is formed over the trench structure.
申请公布号 US7326625(B2) 申请公布日期 2008.02.05
申请号 US20050052552 申请日期 2005.02.07
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 JEONG JOO-HYUN;CHUNG CHUL-HO
分类号 H01L21/20;H01L27/02;H01L21/02;H01L21/764;H01L27/08 主分类号 H01L21/20
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