METHOD OF MANUFACTURING A NON-VOLATILE MEMORY DEVICE

摘要

A method for fabricating an NVM(non-volatile memory) device is provided to reduce a leakage current through upper, intermediate and lower dielectric layers by sufficiently densifying the upper, intermediate and lower dielectric layers by a heat treatment performed at a high temperature. A tunnel insulation layer is formed on a substrate(100). A conductive pattern is formed on the tunnel insulation layer. A lower dielectric layer is formed on the conductive pattern. A first heat treatment is performed to densify the lower dielectric layer. An intermediate dielectric layer having a lower energy band gap than that of the lower dielectric layer is formed on the firstly heat-treated lower dielectric layer. An upper dielectric layer including the same material as the lower dielectric layer is formed on the intermediate dielectric layer. A second heat treatment is performed to densify the intermediate dielectric layer and the upper dielectric layer. A conductive layer is formed on the secondly heat-treated upper dielectric layer. The lower dielectric layer can include a first metal oxide, and the intermediate dielectric layer can include a second metal oxide having a higher dielectric constant than that of the first metal oxide.