摘要 |
<p>Disclosed is a resist composition for liquid immersion exposure, which has excellent immersion medium resistance and lithography characteristics at the same time. Also disclosed is a method for forming a resist pattern. Specifically disclosed is a resist composition for liquid immersion exposure containing a resin component (A) whose alkali solubility is varied by the action of an acid, and an acid generator component (B) which generates an acid when exposed to light. The resin component (A) contains a resin (A1) containing a fluorine atom, and another resin (A2) having a constitutional unit (a') derived from an acrylic acid and containing no fluorine atom. The amount of the resin (A1) contained in the resin component (A) is within the range of 0.1-50% by mass.</p> |