发明名称 SELF REFRESH CIRCUIT OF SEMICONDUCTOR MEMORY APPARATUS
摘要 A self refresh circuit of a semiconductor memory apparatus is provided to prevent a glitch self refresh pulse from being outputted. A pulse generation unit(100) generates a pulse by receiving an oscillator signal. An enable signal generation unit(200) generates an enable signal enabled in response to a self refresh enable signal, and generates the enable signal disabled in response to the pulse and a self refresh precharge signal. A self refresh pulse generation unit(150) outputs the pulse as a self refresh pulse in response to the enable signal. The pulse generation unit generates the pulse enabled at timing when the oscillator signal is disabled.
申请公布号 KR100857444(B1) 申请公布日期 2008.09.10
申请号 KR20070035946 申请日期 2007.04.12
申请人 HYNIX SEMICONDUCTOR INC. 发明人 MOON, HYUNG WOOK;LEE, JEONG WOO;CHOI, WON JUN;SONG, KEUN SOO
分类号 G11C11/401;G11C11/402;G11C11/4076 主分类号 G11C11/401
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