发明名称 |
SELF REFRESH CIRCUIT OF SEMICONDUCTOR MEMORY APPARATUS |
摘要 |
A self refresh circuit of a semiconductor memory apparatus is provided to prevent a glitch self refresh pulse from being outputted. A pulse generation unit(100) generates a pulse by receiving an oscillator signal. An enable signal generation unit(200) generates an enable signal enabled in response to a self refresh enable signal, and generates the enable signal disabled in response to the pulse and a self refresh precharge signal. A self refresh pulse generation unit(150) outputs the pulse as a self refresh pulse in response to the enable signal. The pulse generation unit generates the pulse enabled at timing when the oscillator signal is disabled.
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申请公布号 |
KR100857444(B1) |
申请公布日期 |
2008.09.10 |
申请号 |
KR20070035946 |
申请日期 |
2007.04.12 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
MOON, HYUNG WOOK;LEE, JEONG WOO;CHOI, WON JUN;SONG, KEUN SOO |
分类号 |
G11C11/401;G11C11/402;G11C11/4076 |
主分类号 |
G11C11/401 |
代理机构 |
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代理人 |
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地址 |
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