ELECTRICAL ANTIFUSE, METHOD OF MANUFACTURE AND METHOD OF PROGRAMMING

摘要

An antifuse (100) having a link (125) including a region (150) of unsilicided semiconductor material may be programmed at reduced voltage and current and with reduced generation of heat by electromigration of metal or suicide from a cathode (120) into the region of unsilicided semiconductor material to form an alloy having reduced bulk resistance. The cathode (120) and anode (110) are preferably shaped to control regions from which (e.g. 160) and to which (e.g. 150, 110) material is electrically migrated. After programming, additional electromigration of material (at 925, 960) can return the antifuse to a high resistance state. The process by which the antifuse is fabricated is completely compatible with fabrication of field effect transistors and the antifuse may be advantageously formed on isolation structures.