发明名称 |
Method for Manufacturing Bonded Wafer and Bonded Wafer |
摘要 |
The present invention provides a method for manufacturing a bonded wafer prepared by bonding a base wafer and a bond wafer, comprising at least a step of etching an oxide film in a terrace region in an outer periphery of the bonded wafer wherein the oxide film in the terrace region is etched by spin-etching with holding and spinning the bonded wafer. Thereby, there is provided a method for manufacturing a bonded wafer in which an oxide film formed in a terrace region of a base wafer is efficiently etched without removing an oxide film on the back surface of the base wafer.
|
申请公布号 |
US2008315349(A1) |
申请公布日期 |
2008.12.25 |
申请号 |
US20050883816 |
申请日期 |
2005.11.02 |
申请人 |
SHIN-ETSU HANDOTAI CO., LTD. |
发明人 |
TAKEI TOKIO;YOSHIZAWA SIGEYUKI;MIYAZAKI SUSUMU;YOKOKAWA ISAO;NOTO NOBUHIKO |
分类号 |
H01L21/762;H01L27/12 |
主分类号 |
H01L21/762 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|