发明名称 FORMATION METHOD OF GATE RECESS AND GATE
摘要 A gate recess and a method for forming a gate are provided to reduce a process cost by not requiring an additional electronic beam lithography process. A first resist layer(110) is formed on a substrate(100). A pattern of a gate foot is formed in the first resist layer. A second resist layer(150) is formed on the first resist layer. The pattern of the gate head is formed in the second resist layer. The substrate is etched. The pattern of the gate foot inclines to a source(130) and forms a gamma gate pattern.
申请公布号 KR20090089923(A) 申请公布日期 2009.08.25
申请号 KR20080015082 申请日期 2008.02.20
申请人 SEOUL NATIONAL UNIVERSITY INDUSTRY FOUNDATION 发明人 KIM, SUNG WON;KO, YU MIN
分类号 H01L21/336 主分类号 H01L21/336
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