| 摘要 |
<p>PURPOSE:To obtain a semiconductor memory with a wide applied area by selectively applying a first potential or a second potential to third and fourth potential wires respectively. CONSTITUTION:Due to that first and second pull-up/pull-down means 21 and 22 are connected to a first potential wire V1 or a third potential wire V2, or third and fourth pull-up/pull-down means 23 and 24 are connected to a second potential wire G1 or a fourth potential wire G2, plural types of memory cell 2 can be obtained. And due to that the first potential or the second potential is applied to the third potential wire V2, or the first potential or the second potential is applied to the fourth potential wire G2 when using, the memory cell 2 operates as a static type memory cell or a read on memory cell storing optional data fixedly. Thus, it is possible to obtain the semiconductor memory with the wide applied area.</p> |
