发明名称 |
Columnar crystal containing light emitting element and method of manufacturing the same |
摘要 |
A method of manufacturing a semiconductor element by forming, on a substrate, columnar crystals of a nitride-base or an oxide-base compound semiconductor, and by using the columnar crystals, wherein on the surface of the substrate, the columnar crystals are grown while ensuring anisotropy in the direction of c-axis, by controlling ratio of supply of Group-III atoms and nitrogen, or Group-II atoms and oxygen atoms, and temperature of crystal growth, so as to suppress crystal growth in the lateral direction on the surface of the substrate. |
申请公布号 |
US9362717(B2) |
申请公布日期 |
2016.06.07 |
申请号 |
US200511574386 |
申请日期 |
2005.08.30 |
申请人 |
SOPHIA SCHOOL CORPORATION |
发明人 |
Kikuchi Akihiko;Kishino Katsumi |
分类号 |
H01L33/00;H01S5/183;B82Y20/00;C30B25/02;C30B29/16;C30B29/40;C30B29/60;C30B23/00;H01L21/02;H01L33/08;H01S5/02;H01S5/04;H01S5/32;H01S5/34;H01S5/343;H01L33/18 |
主分类号 |
H01L33/00 |
代理机构 |
Sughrue Mion, PLLC |
代理人 |
Sughrue Mion, PLLC |
主权项 |
1. A semiconductor element comprising:
a substrate; a plurality of columnar crystals arranged on said substrate according to a predetermined density, and in which a device structure is formed; wherein each of the plurality of columnar crystals comprises an n-type cladding layer, an i-type blocking layer, a light emitting layer, and a p-type cladding layer arranged in this order from the substrate, or each of the plurality of columnar crystals comprises an n-type cladding layer, a light emitting layer, an i-type blocking layer, and a p-type cladding layer arranged in this order from the substrate, wherein a material of the p-type cladding layer comprises p-GaN:Mg or p-AlGaN:Mg, a material of the i-type blocking layer comprises intrinsic GaN, a material of the n-type cladding layer comprises n-GaN:Si or n-AlGaN:Si, and the light emitting layer has a single-quantum well structure comprising InxGa1-xN/InyGa1-yN or AlxGa1-xN/AlyGa1-yN or a multiple-quantum well structure comprising multiple alternating layers comprising InxGa1-xN/InyGa1-yN or AlxGa1-xN/AlyGa1-yN; and wherein the p-type cladding layer has a truncated reverse cone shape; wherein upper surfaces of the p-type cladding layers are fused together to form a two-dimensionally continuous thin film layer. |
地址 |
Tokyo JP |