Semiconductor devices having through-vias and methods for fabricating the same

摘要

The inventive concept provides semiconductor devices having through-vias and methods for fabricating the same. The method may include forming a via-hole opened toward a top surface of a substrate and partially penetrating the substrate, forming a via-insulating layer having a first thickness on a bottom surface of the via-hole and a second thickness smaller than the first thickness on an inner sidewall of the via-hole, forming a through-via in the via-hole which the via-insulating layer is formed in, and recessing a bottom surface of the substrate to expose the through-via. Forming the via-insulating layer may include forming a flowable layer on the substrate, and converting the flowable layer into a first flowable chemical vapor deposition layer having the first thickness on the bottom surface of the via-hole.

主权项

1. A method for fabricating a semiconductor device, the method comprising: forming a via-hole opened toward a top surface of a substrate and partially penetrating the substrate; forming a via-insulating layer having a first thickness on a bottom surface of the via-hole and a second thickness on an inner sidewall of the via-hole, the second thickness smaller than the first thickness; forming a through-via in the via-hole in which the via-insulating layer is formed; and recessing a bottom surface of the substrate to expose the through-via, wherein forming the via-insulating layer comprises: forming a flowable layer on the substrate; and converting the flowable layer into a first flowable chemical vapor deposition layer having the first thickness on the bottom surface of the via-hole, wherein recessing the bottom surface of the substrate to expose the through-via comprises: recessing the bottom surface of the substrate to expose the first flowable chemical vapor deposition layer; forming a lower insulating layer covering the first flowable chemical vapor deposition layer on the recessed bottom surface of the substrate; and patterning the lower insulating layer and the first flowable chemical vapor deposition layer to form an opening having a width smaller than a width of the via-hole and exposing a bottom end of the through-via; forming a terminal extending in the opening so as to be connected to the bottom end of the through-via on the lower insulating layer, wherein the bottom end of the through-via does not reach the recessed bottom surface of the substrate.