Semiconductor light emitting device

摘要

A semiconductor light emitting device including a substrate, an electrode and a light emitting region is provided. The substrate may have protruding portions formed in a repeating pattern on substantially an entire surface of the substrate while the rest of the surface may be substantially flat. The cross sections of the protruding portions taken along planes orthogonal to the surface of the substrate may be semi-circular in shape. The cross sections of the protruding portions may in alternative be convex in shape. A buffer layer and a GaN layer may be formed on the substrate.

主权项

1. A semiconductor light emitting device comprising:
an n-type semiconductor layer, a light emitting layer and a p-type semiconductor layer which are GaN-based semiconductors and formed on a primary surface of a C plane (0001) sapphire substrate, the sapphire substrate comprising a plurality of protrusions formed on the primary surface of the sapphire substrate in a two-dimensionally repeated pattern, and the protrusions having a shape of a polygon in plan view of the light emitting device, said polygon having two adjacent component sides that are perpendicular to A-axis of said GaN-based semiconductors, wherein in the plan view, an external shape of the semiconductor light emitting device is a polygon having two adjacent component sides that make the same angle as the two adjacent component sides of the protrusions.