| 发明名称 | Photodetector and method for manufacturing the same | ||
| 摘要 | A photodetector includes a substrate and an insulating arrangement formed in the substrate. The insulating arrangement electrically insulates a confined region of the substrate. The confined region is configured to generate free charge carriers in response to an irradiation. The photodetector further includes a read-out electrode arrangement configured to provide a photocurrent formed by at least a portion of the free charge carriers that are generated in response to the irradiation. The photodetector also includes a biasing electrode arrangement that is electrically insulated against the confined region by means of the insulating arrangement. The biasing electrode arrangement is configured to cause an influence on a spatial charge carrier distribution within the confined region so that fewer of the free charge carriers recombine at boundaries of the confined region compared to an unbiased state. | ||
| 申请公布号 | US9368654(B2) | 申请公布日期 | 2016.06.14 |
| 申请号 | US201514641472 | 申请日期 | 2015.03.09 |
| 申请人 | Infineon Technologies AG | 发明人 | Kautzsch Thoralf |
| 分类号 | H01L31/0224;H01L31/102;H01L31/062;G01J3/50;H01L31/18 | 主分类号 | H01L31/0224 |
| 代理机构 | Eschweiler & Associates, LLC | 代理人 | Eschweiler & Associates, LLC |
| 主权项 | 1. A method for manufacturing a photodetector, the method comprising: providing a semiconductor substrate having a main surface; forming an insulating arrangement within the substrate that electrically insulates a confined region of the substrate; forming a biasing electrode arrangement electrically insulated against the confined region by means of the insulating arrangement; and forming a read-out electrode arrangement comprising at least two electrodes contacting different portions of the confined region and being configured to provide a photocurrent formed by at least a portion of the free charge carriers that are generated in response to the irradiation. | ||
| 地址 | Neubiberg DE | ||