| 发明名称 |
Complementary metal-oxide-semiconductor device |
| 摘要 |
A CMOS device includes a substrate, a pMOS transistor and an nMOS transistor formed on the substrate, and a gated diode. The gated diode includes a floating gate formed on the substrate in between the pMOS transistor and the nMOS transistor and a pair of a p-doped region and an n-doped region formed in the substrate and between the pMOS transistor and the nMOS transistor. The n-doped region is formed between the floating gate and the nMOS transistor, and the p-doped region is formed between the floating gate and the pMOS transistor. |
| 申请公布号 |
US9368500(B2) |
申请公布日期 |
2016.06.14 |
| 申请号 |
US201314071670 |
申请日期 |
2013.11.05 |
| 申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
Wang Chang-Tzu;Chen Yu-Chun;Tang Tien-Hao;Su Kuan-Cheng |
| 分类号 |
H01L27/092;H01L29/78;H01L27/06;H01L27/02;H01L21/8238 |
主分类号 |
H01L27/092 |
| 代理机构 |
|
代理人 |
Hsu Winston;Margo Scott |
| 主权项 |
1. A complementary metal-oxide-semiconductor (CMOS) device, comprising:
a substrate; a pMOS transistor and an nMOS transistor formed on the substrate; and a gated diode comprising:
a floating gate formed on the substrate in between the pMOS transistor and the nMOS transistor; anda p-doped region and an n-doped region formed in the substrate and between the pMOS transistor and the nMOS transistor, the n-doped region being formed between the floating gate and the nMOS transistor and the p-doped region being formed between the floating gate and the pMOS transistor, wherein the p-doped region and the n-doped region are formed on respective two sides of floating gate and immediately adjacent to the floating gate. |
| 地址 |
Science-Based Industrial Park, Hsin-Chu TW |
