| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF FORMING VERTICAL STRUCTURE |
| 摘要 |
A semiconductor device includes a source/drain region, a barrier layer, and an interlayer dielectric. The barrier layer surrounds the source/drain region. The interlayer dielectric surrounds the barrier layer. As such, the source/drain region can be protected by the barrier layer from oxidation during manufacturing of the semiconductor device, e.g., the formation of the interlayer dielectric. |
| 申请公布号 |
US2016211370(A1) |
申请公布日期 |
2016.07.21 |
| 申请号 |
US201615084607 |
申请日期 |
2016.03.30 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company Limited |
发明人 |
PENG CHIH-TANG;HUANG TAI-CHUN;TSAI TENG-CHUN;LIN CHENG-TUNG;CHEN DE-FANG;WANG LI-TING;WANG CHIEN-HSUN;LIN HUAN-JUST;LU YUNG-CHENG;LEE TZE-LIANG |
| 分类号 |
H01L29/78;H01L23/29;H01L23/31;H01L27/088;H01L29/06 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a source/drain region; a barrier layer surrounding the source/drain region; and an interlayer dielectric surrounding the barrier layer. |
| 地址 |
Hsinchu TW |
