METHOD OF MANUFACTURING OXIDE THIN FILM TRANSISTOR

摘要

There is provided a method of manufacturing an oxide thin film transistor (TFT). The method includes forming a gate electrode on a substrate, forming a gale insulating layer on the gate electrode, forming an oxide semiconductor layer including a channel layer on the gate insulating layer, forming a source electrode and a drain electrode separated from each other on the oxide semiconductor layer, first plasma processing the substrate on which the source electrode and the drain electrode are formed at a carbon (C) atmosphere, secondly plasma processing the substrate al a nitrogen oxide atmosphere, and sequentially forming a first protective layer and a second protective layer on the substrate.

主权项

1. A method of manufacturing an oxide thin film transistor (TFT), the method comprising:
forming a gate electrode on a substrate; forming a gate insulating layer on the gate electrode; forming an oxide semiconductor layer including a channel layer on the gate insulating layer; forming a source electrode and a drain electrode separated from each other on the oxide semiconductor layer; first plasma processing the substrate on which the source electrode and the drain electrode are formed at a carbon (C) atmosphere; secondly plasma processing the substrate at a nitrogen oxide atmosphere: and sequentially forming a first protective layer and a second protective layer on the substrate.