| 发明名称 |
SEMICONDUCTOR SUBSTRATE ARRANGEMENT, A SEMICONDUCTOR DEVICE, AND A METHOD FOR PROCESSING A SEMICONDUCTOR SUBSTRATE |
| 摘要 |
According to various embodiments, a semiconductor substrate arrangement may be provided, wherein the semiconductor substrate arrangement may include: a semiconductor substrate defining a first area at a first level and a second area next to the first area at a second level, wherein the first level is lower than the second level; a plurality of planar non-volatile memory structures disposed over the semiconductor substrate in the first area; and a plurality of planar transistor structures disposed over the semiconductor substrate in the second area. |
| 申请公布号 |
US2016211250(A1) |
申请公布日期 |
2016.07.21 |
| 申请号 |
US201514597342 |
申请日期 |
2015.01.15 |
| 申请人 |
Infineon Technologies AG |
发明人 |
LANGHEINRICH Wolfram;STRENZ Robert;TEMPEL Georg;STAHRENBERG Knut;HATZOPOULOS Nikolaos;BUKETHAL Christoph;KNOBLOCH Klaus;GRATZ Achim;ROEHRICH Mayk |
| 分类号 |
H01L27/02;H01L29/16;H01L29/49;H01L27/12;H01L27/115 |
主分类号 |
H01L27/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor substrate arrangement comprising:
a semiconductor substrate defining a first area at a first level and a second area next to the first area at a second level, wherein the first level is lower than the second level; a plurality of planar non-volatile memory structures disposed over the semiconductor substrate in the first area; and a plurality of planar transistor structures disposed over the semiconductor substrate in the second area. |
| 地址 |
Neubiberg DE |
