发明名称 |
MANUFACTURING AND EVALUATION METHOD OF A SEMICONDUCTOR DEVICE |
摘要 |
Provided is a method of manufacturing a semiconductor device which includes a semiconductor chip, an insulating board mounted with the semiconductor chip and having a wiring pattern, and a leadframe connected to the wiring pattern, the semiconductor chip, the wiring pattern and the leadframe being partially sealed with a sealing resin, wherein: an epoxy resin composition formed by adding 0.3 to 0.7 mass % of epoxysilane as a silane coupling agent to an epoxy resin is used as the sealing resin; and a copper member made of copper or a copper alloy and having an oxide film formed in the surface with a film thickness in a color indicated by an L* value in the range of 48 to 51, an a* value in the range of 40 to 49 and a b* value in the range of 24 to 40 is used as the leadframe and the wiring pattern. |
申请公布号 |
US2016211201(A1) |
申请公布日期 |
2016.07.21 |
申请号 |
US201615081988 |
申请日期 |
2016.03.28 |
申请人 |
FUJI ELECTRIC CO., LTD. |
发明人 |
NAKAMATA Yuko;ICHIMURA Yuji;YAMAGUCHI Kei |
分类号 |
H01L23/495;H01L21/48;H01L23/31;H01L23/29;H01L21/66 |
主分类号 |
H01L23/495 |
代理机构 |
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代理人 |
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主权项 |
1. A method for evaluating strength, comprising:
providing a bonding surface between a surface of an oxide film and a cured product of a resin formed on the surface of the oxide film in a molded article formed by integrating the resin with a copper member by insert molding; forming the copper member from copper or a copper alloy; determining adhesive strength of the bonding surface based upon a film thickness of the oxide film evaluated by an L* value, an a* value, and a b* value of the surface of the oxide film, the L* value, the a* value, and the b* value being chromatic values of a predetermined color system; and verifying whether each of the L* value is in the range of 48 to 51, the a* value is in the range of 40 to 49, and the b* value is in the range of 24 to 40. |
地址 |
Kawasaki-shi JP |