EPITAXIAL TRANSPARENT CONDUCTIVE OXIDE ELECTRODES FOR GaN LEDS

摘要

In one embodiment, a vertical LED die is formed by epitaxially growing over a sapphire substrate a transparent first conductive oxide layer, followed by an n-type GaN-based layer, followed by a GaN-based active layer, followed by a p-type GaN-based layer, followed by a transparent second conductive oxide layer. The transparent conductive oxide has a Wurtzite crystal structure that enables epitaxially growth of GaN-based layers over the conductive oxide. The substrate is then removed. The two conductive oxide layers may be top and bottom electrodes for the LED die. Since all layers are epitaxially grown, fabrication is simplified. The LED dies may be microscopic and printed as an ink over a bottom conductive layer that electrically contacts one of the transparent conductive oxide layers. The LED dies are sandwiched between the bottom conductive layer and a top conductive layer to form an ultra-thin flexible light sheet.

主权项

1. A light emitting structure comprising:
a first vertical light emitting diode (LED) die comprising:
a transparent first conductive oxide layer epitaxially grown over a growth substrate;a first GaN-based layer epitaxially grown over the first conductive oxide layer;a GaN-based active layer epitaxially grown over the first GaN-based layer;a second GaN-based layer epitaxially grown over the active layer; anda transparent second conductive oxide layer epitaxially grown over the second GaN-based layer.