发明名称 |
Clamped Avalanche Photodiode |
摘要 |
An avalanche photodiode device operated in Geiger-mode, the device comprising a P-N junction formed on a substrate with a first semiconductor region and a second semiconductor region with an anode and cathode. The device further comprising a third semiconductor region, the third semiconductor region in physical contact with the second region, not in physical contact with the first region, and being the same semiconductor-type as the first semiconductor region. Additionally comprising a diode on the second semiconductor region and having a turn-on voltage than the P-N junction. |
申请公布号 |
US2016218236(A1) |
申请公布日期 |
2016.07.28 |
申请号 |
US201615008321 |
申请日期 |
2016.01.27 |
申请人 |
Voxtel, Inc. |
发明人 |
DHULLA Vinit;Miller Drake;Forbes Leonard |
分类号 |
H01L31/107;H01L29/872;H01L27/144 |
主分类号 |
H01L31/107 |
代理机构 |
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代理人 |
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主权项 |
1. An avalanche photodiode device operated in Geiger-mode, the device comprising:
a P-N junction formed on a substrate with a first semiconductor region and a second semiconductor region with an anode and a cathode; a third semiconductor region, the third semiconductor region in physical contact with the second region, not in physical contact with the first region, and being the same semiconductor-type as the first semiconductor region; and a diode on the second semiconductor region and having a turn-on voltage lower than the P-N junction. |
地址 |
Beaverton OR US |