发明名称 INTEGRATED INDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME
摘要 An integrated inductor structure includes a capacitor, a guard ring, a patterned shield, and an inductor. The guard ring is coupled to the capacitor. The patterned shield is coupled to the guard ring through the capacitor, such that the patterned shield is floating. The inductor is disposed above the guard ring and the patterned shield.
申请公布号 US2016218169(A1) 申请公布日期 2016.07.28
申请号 US201514716898 申请日期 2015.05.20
申请人 Realtek Semiconductor Corporation 发明人 YEN Hsiao-Tsung;LIANG Chia-Jui
分类号 H01L49/02;H01L23/58;H01L27/06;H01L29/66;H01L29/94;H01L29/93;H01L23/528 主分类号 H01L49/02
代理机构 代理人
主权项 1. An integrated inductor structure, comprising: a capacitor; a guard ring coupled to the capacitor; a patterned shield coupled to the guard ring through the capacitor, thereby floating the patterned shield; and an inductor disposed above the guard ring and the patterned shield.
地址 Hsinchu TW