| 发明名称 |
CONTROLLING THE REFLOW BEHAVIOUR OF BPSG FILMS AND DEVICES MADE THEREOF |
| 摘要 |
A method for depositing an insulating layer includes performing a primary deposition over a sidewall of a feature by depositing a layer of silicate glass using a silicon source at a first flow rate and a dopant source at a second flow rate. A ratio of the flow of the dopant source to the flow of the silicon source is a first ratio. The method further includes performing a secondary deposition over the sidewall of a feature by increasing the flow of the silicon source relative to the flow of the dopant source. The ratio of the flow of the dopant source to the flow of the silicon source is a second ratio lower than the first ratio, and stopping the flow of the silicon source after performing the secondary deposition. A reflow process is performed after stopping the flow. A variation in thickness of the layer of silicate glass over the sidewall of a feature after the reflow process is between 1% to 20%. |
| 申请公布号 |
US2016218002(A1) |
申请公布日期 |
2016.07.28 |
| 申请号 |
US201514603943 |
申请日期 |
2015.01.23 |
| 申请人 |
Infineon Technologies Austria AG |
发明人 |
Steinbrenner Juergen;Kahn Markus;Schoenherr Helmut;Joshi Ravi;Hofer Heimo;Poelzl Martin;Huetter Harald |
| 分类号 |
H01L21/02;H01L29/06;H01L23/532;H01L21/768;H01L23/528 |
主分类号 |
H01L21/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for depositing an insulating layer, the method comprising:
performing a primary deposition over a first sidewall of a feature and a second sidewall of the feature by depositing a layer of silicate glass using a silicon source at a first flow rate and a dopant source at a second flow rate, wherein a ratio of the flow of the dopant source to the flow of the silicon source is a first ratio, wherein the second sidewall faces the first sidewall; performing a secondary deposition over the first sidewall of a feature by increasing the flow of the silicon source relative to the flow of the dopant source, wherein the ratio of the flow of the dopant source to the flow of the silicon source is a second ratio lower than the first ratio; stopping the flow of the silicon source after performing the secondary deposition; and performing a reflow process after stopping the flow, wherein a variation in thickness of the layer of silicate glass over the sidewall of a feature after the reflow process is between 0.1% to 10%, wherein the first sidewall and the second sidewall contact a trench gate disposed in a substrate, wherein the first sidewall intersects with the second sidewall at an angle less than 60°. |
| 地址 |
Villach AT |
