| 发明名称 |
MONITORING DEVICE, ION IMPLANTATION DEVICE, AND MONITORING METHOD |
| 摘要 |
The present disclosure provides a monitoring device including: a filtering section that extracts and outputs at least one of a high frequency component or a low frequency component of a beam current received from a detection output section of an ion implantation device; and a computation section that computes at least one of a value corresponding to a content ratio of the high frequency component in the beam current, or a value corresponding to a content ratio of the low frequency component in the beam current. |
| 申请公布号 |
US2016217973(A1) |
申请公布日期 |
2016.07.28 |
| 申请号 |
US201615003311 |
申请日期 |
2016.01.21 |
| 申请人 |
LAPIS Semiconductor Co., Ltd. |
发明人 |
Ishida Makoto |
| 分类号 |
H01J37/304;G01R19/00;H01J37/317 |
主分类号 |
H01J37/304 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A monitoring device comprising:
a filtering section that extracts and outputs at least one of a high frequency component or a low frequency component of a beam current received from a detection output section of an ion implantation device; and a computation section that computes at least one of a value corresponding to a content ratio of the high frequency component in the beam current, or a value corresponding to a content ratio of the low frequency component in the beam current. |
| 地址 |
Kanagawa JP |
