发明名称 |
DISPLAY DEVICE, OLED PIXEL DRIVING CIRCUIT AND DRIVING METHOD THEREFOR |
摘要 |
The present disclosure provides a display device, an OLED pixel driving circuit and a driving method therefore. The OLED pixel driving circuit includes: an electroluminescent element, a switching unit, a storage unit, a compensation unit, a driving transistor, a reset unit and a partition unit; wherein, the switching unit is connected with a data signal and is connected with the storage unit; the compensation unit is connected with the storage unit; the storage unit is connected with a gate electrode of the driving transistor; a source electrode of the driving transistor is connected with a driving voltage, a drain electrode thereof is connected with the compensation unit; the partition unit is connected with the drain electrode and is connected with the electroluminescent element; the reset unit is connected with a reset signal and is connected with the gate electrode. |
申请公布号 |
US2016217741(A1) |
申请公布日期 |
2016.07.28 |
申请号 |
US201615090126 |
申请日期 |
2016.04.04 |
申请人 |
EverDisplay Optronics (Shanghai) Limited |
发明人 |
TSENG Ying-Hsiang;XIAO Lina |
分类号 |
G09G3/3258;G09G3/3275;G09G5/10 |
主分类号 |
G09G3/3258 |
代理机构 |
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代理人 |
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主权项 |
1. An OLED pixel driving circuit, comprising: an electroluminescent element, a switching unit, a storage unit, a compensation unit, a driving transistor, a reset unit and a partition unit; wherein,
the switching unit is configured to receive a data signal and control the data signal to be written into the storage unit; the compensation unit is configured to prestore a threshold voltage of the driving transistor into the storage unit; the storage unit is configured to store a written voltage signal and to provide it to a gate electrode of the driving transistor; the driving transistor is configured to receive a driving voltage; the partition unit is configured to partition an electronic connection between the driving transistor and the electroluminescent element; and the reset unit is configured to reset a level of the gate electrode of the driving transistor. |
地址 |
Shanghai City CN |