Diode with insulated anode regions

摘要

A diode is integrated on a semiconductor chip having anode and cathode surfaces opposite to each other. The diode comprises a cathode region extending inwardly from the cathode surface, a drift region extending between the anode surface and the cathode region, and a plurality of anode regions extending from the anode surface in the drift region. The diode further comprises a cathode electrode coupled with the cathode region, and an anode electrode that contacts one or more contacted anode regions of said anode regions and is electrically insulated from one or more floating anode regions of the anode regions. The diode is configured so that charge carriers are injected from the floating anode regions into the drift region in response to applying of a control voltage exceeding a threshold voltage.

主权项

1. A diode integrated on a chip of semiconductor material having an anode surface and a cathode surface opposite to each other, the diode comprising:
a cathode region having a doping of a first type, the cathode region extending from the cathode surface in the chip, a drift region having a doping of the first type with a dopant concentration lower than a dopant concentration of the cathode region, the drift region extending between the anode surface and the cathode region, a plurality of anode regions having a doping of a second type, each anode region extending from the anode surface in the drift region, a cathode electrode of electrically conductive material on the cathode surface and electrically coupled with said cathode region, and an anode electrode of electrically conducting material, wherein: the anode regions are positioned between the anode electrode and the cathode electrode; one or more contacted anode regions of said anode regions are electrically coupled with the anode electrode on the anode surface; one or more floating anode regions of said anode regions are electrically insulated from the anode electrode; the one or more floating anode regions are configured so that charge carriers are injected from said one or more floating anode regions into the drift region in response to a control voltage applied between the anode electrode and the cathode electrode, exceeding a threshold voltage of the diode; and the floating anode regions are organized into sets each of one or more floating anode regions, each set of floating anode regions being positioned on the anode surface between a respective pair of the contacted anode regions, and each set of one or more floating anode regions being separated from the respective pair of the contacted anode region by portions of the drift region.