Replacement channel

摘要

The present disclosure relates to a device and method for strain inducing or high mobility channel replacement in a semiconductor device. The semiconductor device is configured to control current from a source to a drain through a channel region by use of a gate. A strain inducing or high mobility layer produced in the channel region between the source and drain can result in better device performance compared to Si, faster devices, faster data transmission, and is fully compatible with the current semiconductor manufacturing infrastructure.

主权项

1. A semiconductor device, comprising:
a continuous strain inducing or high mobility layer arranged within a recess in an upper surface of a substrate and configured to provide increased charge carrier mobility relative to the substrate; a gate arranged over the continuous strain inducing or high mobility layer, and separated from the continuous strain inducing or high mobility layer by a dielectric; a channel region arranged within the continuous strain inducing or high mobility layer and arranged under the gate; doped source/drain regions arranged within the continuous strain inducing or high mobility layer and laterally separated from one another by the channel region; and a low mobility layer confined to directly over the channel region and separating an underside of the gate from the channel region, wherein the low mobility layer has a different semiconductor lattice than the substrate.